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  this is information on a product in full production. july 2013 docid024059 rev 1 1/9 STTH1512-Y automotive ultrafast recovery, high voltage diode datasheet ? production data features ? ultrafast, soft recovery ? very low conduction and switching losses ? high frequency and/or high pulsed current operation ? high reverse voltage capability ? high junction temperature ? aec-q101 qualified description the high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. these characteristics make it ideal for heavy duty applications that demand long term reliability. the improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device for automotive applications. table 1. device summary symbol value i f(av) 15 a v rrm 1200 v t j 175 c v f (typ) 1.20 v t rr (typ) 53 ns nc a dpak 2 stth1512gy a k k www.st.com
characteristics STTH1512-Y 2/9 docid024059 rev 1 1 characteristics to evaluate the conduction losses use the following equation: p = 1.4 x i f(av) + 0.027 i f 2 (rms) table 2. absolute ratings (limiting values at 25 c, unless otherwise specified) symbol parameter value unit v rrm repetitive peak reverse voltage 1200 v i f(rms) forward rms current d 2 pak 50 a i f(av) average forward current, = 0.5 d 2 pak t c = 130 c 15 a i frm repetitive peak forward current t p = 5 s, f = 5 khz square 200 a i fsm surge non repetitive forward current t p = 10 ms sinusoidal 200 a t stg storage temperature range -65 to + 175 c t j operating junction temperature range -40 to + 175 c table 3. thermal parameters symbol parameter value unit r th(j-c) junction to case d 2 pak 1.3 c/w table 4. static electrical characteristics symbol parameter test conditions min. typ. max. unit i r (1) 1. pulse test: t p = 5 ms, < 2% reverse leakage current t j = 25 c v r = v rrm 15 a t j = 125 c 10 100 v f (2) 2. pulse test: t p = 380 s, < 2% forward voltage drop t j = 25 c i f = 15 a 2.10 v t j = 125 c 1.25 1.90 t j = 150 c 1.20 1.80
docid024059 rev 1 3/9 STTH1512-Y characteristics 9 table 5. dynamic characteristics symbol parameter test conditions min. typ. max. unit t rr reverse recovery time i f = 1 a, di f /dt = -50 a/s, v r = 30 v, t j = 25 c 105 ns i f = 1 a, di f /dt = -100 a/s, v r = 30 v, t j = 25 c 53 75 i rm reverse recovery current i f = 15 a, di f /dt = -200 a/s, v r = 600 v, t j = 125 c 20 28 a s softness factor i f = 15 a, di f /dt = -200 a/s, v r = 600 v, t j = 125 c 1.5 t fr forward recovery time i f = 15 a di f /dt = 50 a/s v fr = 1.5 x v fmax , t j = 25 c 600 ns v fp forward recovery voltage i f = 15 a, di f /dt = 50 a/s, t j = 25 c 5.5 v figure 1. conduction losses versus average current figure 2. forward voltage drop versus forward current 0 5 10 15 20 25 30 35 0 2 4 6 8 1012141618 p(w) t =tp/t tp = 0.05 = 1 i(a) f(av) = 0.1 = 0.2 = 0.5 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 i(a) fm v (v) fm t =25c (maximum values) j t =150c (maximum values) j t =150c (typical values) j figure 3. relative variation of thermal impedance junction to case versus pulse duration figure 4. peak reverse recovery current versus di f /dt (typical values) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-03 1.e-02 1.e-01 1.e+00 z/r th(j-c) th(j-c) t (s) p single pulse 0 5 10 15 20 25 30 35 40 45 50 0 50 100 150 200 250 300 350 400 450 500 i(a) rm di /dt(a/s) f i =2 x i ff(av) i=i f f(av) i =0.5 x i ff(av) v =600v t =125c r j
characteristics STTH1512-Y 4/9 docid024059 rev 1 figure 5. reverse recovery time versus di f /dt (typical values) figure 6. reverse recovery charge versus di f /dt (typical values) 100 150 200 250 300 350 400 450 500 550 600 0 50 100 150 200 250 300 350 400 450 500 t(ns) rr di /dt(a/s) f i =2 x i ff(av) i=i ff(av) i =0.5 x i ff(av) v =600v t =125c r j 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0 50 100 150 200 250 300 350 400 450 500 q (c) rr i =2 x i ff(av) i =0.5 x i f f(av) i=i f f(av) v =600v t =125c r j di /dt(a/s) f figure 7. softness factor versus di f /dt (typical values) figure 8. relative variations of dynamic parameters versus junction temperature 0.5 1.0 1.5 2.0 2.5 3.0 0 50 100 150 200 250 300 350 400 450 500 s factor i 2xi t =125c ff(av) j v =600v r di /dt(a/s) f 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 25 50 75 100 125 i rm q rr s factor t (c) j i=i reference: t =125c f f(av) j v =600v r t rr figure 9. transient peak forward voltage versus di f /dt (typical values) figure 10. forward recovery time versus di f /dt (typical values) 0 5 10 15 20 25 30 35 40 0 100 200 300 400 500 v(v) fp di /dt(a/s) f i=i t =125c ff(av) j 0 100 200 300 400 500 600 700 800 0 100 200 300 400 500 t(ns) fr di /dt(a/s) f i=i t =125c f f(av) j v =1.5 x v max. fr f
docid024059 rev 1 5/9 STTH1512-Y characteristics 9 figure 11. junction capacitance versus reverse voltage applied (typical values) figure 12. thermal resistance junction to ambient versus copper surface under each lead 10 100 1000 1 10 100 1000 c(pf) v(v) r f=1mhz v =30mv t =25c osc rms j 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 40 r th(j-a) (c/w) s (cm2) cu epoxy printed circuit board fr4, copper thickness = 35 m
package information STTH1512-Y 6/9 docid024059 rev 1 2 package information ? epoxy meets ul94, v0 ? cooling method: by conduction (c) in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. figure 13. d 2 pak dimension definitions g l l3 l2 b b2 e * flat zone no less than 2mm a c2 d r a2 m v2 c a1 *
docid024059 rev 1 7/9 STTH1512-Y package information 9 figure 14. footprint (dimensions in mm) table 6. d 2 pak dimension values ref. dimensions millimeters inches min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.70 0.93 0.027 0.037 b2 1.14 1.70 0.045 0.067 c 0.45 0.60 0.017 0.024 c2 1.23 1.36 0.048 0.054 d 8.95 9.35 0.352 0.368 e 10.00 10.40 0.393 0.409 g 4.88 16 5.28 0.192 0.63 0.208 l 15.00 15.85 0.590 0.624 l2 1.27 1.40 0.050 0.055 l3 1.40 1.75 0.055 0.069 m 2.40 3.20 0.094 0.126 r 0.40 typ. 0.016 typ. v2 0 8 0 8 16.90 10.30 8.90 3.70 5.08 1.30
ordering information STTH1512-Y 8/9 docid024059 rev 1 3 ordering information 4 revision history table 7. ordering information order code marking package weight base qty delivery mode stth1512gy-tr stth1512gy d2pak 1.48 g 10000 tape and reel table 8. document revision history date revision changes 11-jul-2013 1 initial release.
docid024059 rev 1 9/9 STTH1512-Y 9 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not authorized for use in weapons. nor are st products designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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